INTRODUCTION
 

The ACM (Advanced Compact MOSFET) model is a charge-based physical model. All the large-signal characteristics (currents and charges) and the small-signal parameters ((trans)conductances and (trans)capacitances) are given by single-piece expressions with infinite order of continuity for all regions of operation. The ACM model preserves the structural source-drain symmetry of the transistor and uses a reduced number of physical parameters. It is also charge-conserving and has explicit equations for the MOSFET 16 (trans)capacitances. The features of the ACM model can be summarized as follows:

  • single-piece expressions with infinite order of continuity for all regions of operation;
  • source-drain symmetry of the transistor;
  • charge-conserving equations;
  • physically based equations for the dependence of carrier mobility on tranversal  field, carrier velocity saturation, and saturation voltage;
  • dependence of electrical parameters on geometry;
  • independence of technology;
  • easily measurable parameters.

    Genealogy of the ACM model

    ACM Time line

  • 92-Model of the MOS varactor
  • 95-Explicit model of 16 capacitive coefficients
  • 96-Iniversal expression for gm/ID
  • 97-Implementation in circuit simulator
  • 98-Non-quasi-static model
  • 00-Short channel effects in the ac model
  • 02-1/f noise model
  • 04-Unified mismatch & noise models

 

  
 
 
 

INTRODUCTION

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